Design of a ternary memory cell using cntfets

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August undefined, 2024

WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET technology along with a brief discussion on Stanford university model of CNTFET used for simulation of SRAM are discussed. WebFeb 22, 2024 · A TCAM cell with an optimized CNTFET is proposed in this paper. The TCAM cell proposed is designed for improved performance using optimized CNTFET …

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WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … noreen phillips

Design of a Ternary Memory Cell Using CNTFETs IEEE …

WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … WebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell … WebThe research of ternary logic can be roughly divided into three aspects: mathematical theory, ternary logic devices and basic logic circuits,and the applied research on ternary logic.The theoretical study of ternary logic contains various theorems and logical systems, providing the theoretical basis for the latter two pieces of research. noreen plain eagle

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low …

WebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. WebApr 24, 2024 · Using carbon nanotube field effect transistors, (CNTFETs) the MVL gates are made which use N-type CNTFETs without utilizing any resistor. Thus this work helps both ternary and also quaternary logic gates exploiting the threshold voltages of both P and N type transistors. how to remove hats in brookhavenWebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114: how to remove haur glue

"WebApr 1, 2015 · In this Letter, we have presented a DCAM cell capable of ternary logic storage using four CNT transistors (CNTFETs). We have shown using SPICE … " - Design of a ternary memory cell using cntfets

Design of a ternary memory cell using cntfets

WebFeb 28, 2011 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold voltage control, thus avoiding the use of additional power supplies. WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content …

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WebJun 1, 2016 · Two ternary CNTFET SRAM cells (denoted as TC SRAM1 and TC SRAM2) are initially proposed in this paper to address these concerns; features such as sizing, SNM (Static Noise Margin), Power Delay Product (PDP) and write/read times are considered [16]. WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to …

WebAug 3, 2012 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold … WebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping …

WebWith the miniaturization of digital integrated circuits, electronic systems with increased functionality and enhanced performance are preferred. Multi-valued logic design is a promising alternative that offers a higher number of data/information which ... WebIn this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random...

WebFeb 27, 2015 · Activities and Societies: WORK ON DESIGN OF TERNARY MEMORY USING CNTFET PUBLISHED PAPER IN IEEE CONFERENCE ICECS-2015. MASTERS IN VLSI AND EMBEDDED SYSTEM DESIGN GOVT. ENGG. COLLEGE, RAJKOT

WebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. how to remove haze from car paint noreen precisionWebJun 2015. Here the I2C IP core for intercommunication bus is designed using SystemVerilog & UVM for multi-master slave communication in full duplex mode.The verification environment is created using SystemVerilog constructors & UVM base classes.The DUT has been verified for all possible configurations which are: Master Tx, … noreen phillips antiguaWebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. how to remove hayward strainer housingWebOct 22, 2024 · This study presents two novel designs of a ternary memory cell using carbon nanotube field effect transistors (CNFETs) with only one supply voltage. In the previous works, a ternary latch has been used to store the ternary value, which has a considerably more static power and lower static noise margin in comparison to a binary … noreen princeton oprWebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. how to remove haze from carWebJan 1, 2024 · In this paper, a robust ternary SRAM (TSRAM) cell is designed using a novel ternary C-element based on carbon nanotube field-effect transistors (CNTFETs). … how to remove haze from car windshield